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MD8IC925NR1 md8ic925gnr1 1 rf device data nxp semiconductors rf ldmos wideband integrated power amplifiers the md8ic925n wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 mhz. this multi--stage structure is rated for 24 to 32 v operation and covers all typical cellular base station modulation formats. driver application ? 900 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out = 2.5 w avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 920 mhz 36.2 17.5 --48.9 940 mhz 36.2 17.4 --49.5 960 mhz 36.1 17.3 --49.1 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 25 w cw output power (3 db input overdrive from rated p out ) driver application ? 700 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out = 2.5 w avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 728 mhz 36.4 17.2 --48.9 748 mhz 36.4 17.6 --49.7 768 mhz 36.4 17.9 --50.5 features ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? designed for digital predistorti on error corre ction systems ? optimized for doherty applications ? 225 ? c capable plastic package 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated circuit device family. go to http://www.nxp.com/rf and search for an1977 or an1987. 728--960 mhz, 2.5 w avg., 28 v single w--cdma rf ldmos wideband integrated power amplifiers MD8IC925NR1 md8ic925gnr1 to--270wb--14 plastic MD8IC925NR1 to--270wbg--14 plastic md8ic925gnr1 document number: md8ic925n rev. 1, 9/2016 nxp semiconductors technical data ? 2016 nxp b.v.
2 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistor. quiescent current temperature compensation (1) v ds1a rf ina v gs1a rf out1 /v ds2a v gs2a quiescent current temperature compensation (1) v ds1b rf inb v gs1b rf out2 /v ds2b v gs2b v ds1a rf ina n.c. rf inb rf out1 /v ds2a 1 2 3 4 7 8 14 v gs1b 9 10 11 v gs2a v gs1a n.c. n.c. v gs2b n.c. v ds1b rf out2 /v ds2b 13 6 12 (top view) 5 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 ? c case operating temperature t c 150 ? c operating junction temperature (2,3) t j 225 ? c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (3,4) unit thermal resistance, junction to case case temperature 77 ? c, 2.5 w cw, 940 mhz stage 1, 28 vdc, i dq1(a+b) = 58 ma, 940 mhz stage 2, 28 vdc, i dq2(a+b) = 222 ma, 940 mhz r ? jc 5.4 1.8 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) i table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated circuit device family. go to http://www.nxp.com/rf and search for an1977 or an1987. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.nxp.com/rf/calculators . 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955.
MD8IC925NR1 md8ic925gnr1 3 rf device data nxp semiconductors table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 1 -- on characteristics (1) gate threshold voltage (v ds =10vdc,i d =4 ? adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1(a+b) =58ma) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1(a+b) = 58 ma, measured in functional test) v gg(q) 4.1 4.8 5.6 vdc stage 2 -- off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 2 -- on characteristics (1) gate threshold voltage (v ds =10vdc,i d =19 ? adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2(a+b) = 222 ma) v gs(q) ? 2.75 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2(a+b) = 222 ma, measured in functional test) v gg(q) 3.5 4.3 5.0 vdc drain--source on--voltage (v gs =10vdc,i d = 190 adc) v ds(on) 0.1 0.21 1.2 vdc functional tests (2,3) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out = 2.5 w avg., f = 940 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 34.5 36.2 39.5 db power added efficiency pae 15.5 17.4 ? % adjacent channel power ratio acpr ? --49.5 --47.0 dbc input return loss irl ? -- 2 7 -- 1 0 db typical performance over frequency (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out = 2.5 w avg, single--carrier w--cdma, iq magnitude cli pping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 920 mhz 36.2 17.5 --48.9 -- 2 7 940 mhz 36.2 17.4 --49.5 -- 2 7 960 mhz 36.1 17.3 --49.1 -- 2 8 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurements made with device in straight lead configuration before any lead forming operation is applied. lead forming is used for gull wing (gn) parts. (continued)
4 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 26 ? w p out @ 3 db compression point, cw p3db ? 31 ? w imd symmetry @ 28 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 20 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 75 ? mhz quiescent current accuracy over temperature (1,2) with 18 k ? gate feed resistors (--30 to 85 ? c) stage 1 with 20 k ? gate feed resistors (--30 to 85 ? c) stage 2 ? i qt ? ? 1.1 1.9 ? ? % gain flatness in 40 mhz bandwidth @ p out =2.5wavg. g f ? 0.2 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.043 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.004 ? db/ ? c typical performance over frequency (in nxp 700 mhz test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out = 2.5 w avg., single--carrier w--cdma, iq magnitude cli pping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 728 mhz 36.4 17.2 --48.9 -- 1 7 748 mhz 36.4 17.6 --49.7 -- 1 7 768 mhz 36.4 17.9 --50.5 -- 1 8 table 6. ordering information device tape and reel information package MD8IC925NR1 r1 suffix = 500 units, 44 mm tape width, 13--inch reel to--270wb--14 md8ic925gnr1 to--270wbg--14 1. each side of device measured separately. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated circuit device family. go to http://www.nxp.com/rf and search for an1977 or an1987.
MD8IC925NR1 md8ic925gnr1 5 rf device data nxp semiconductors *c24, c25, c26, c27, c28, c29, c30 and c31 are mounted vertically. **r13 and r14 are stacked. z1 r13, r14** c1 v dd1a v dd1b r6 r9 v gg2a v gg1a v gg1b v gg2b r8 r7 c20 md8ic925n r5 r4 c2 c3 c4 c5 c7 figure 3. MD8IC925NR1 test circuit component layout c17 c16 c18 c19 c21 c22 c23 c24* c25* c26* c28* c29* c27* c30* c31* c32 c33 c34 r17 r16 z2 v dd2a v dd2b r15 cut out area c6 c15 c14 c11 c8 r1 r2 r3 r10 r11 r12 c10 c12 c13 c9 rev. 3 table 7. MD8IC925NR1 test circuit component designations and values part description part number manufacturer c1, c20, c21, c34 220 ? f, 100 v electrolytic capacitors eev--fk2a221m panasonic--ecg c2, c17, c22, c33 10 ? f chip capacitors c5750x7s2a106m230kb tdk c3, c6, c9, c12, c15, c18 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c7, c10, c13, c16, c19 47 pf chip capacitors atc600f470jt250xt atc c5, c8, c11, c14 1 ? f chip capacitors c3225x7r2a105kt tdk c23, c24, c31, c32 47 pf chip capacitors atc100b470jt500xt atc c25, c28 6.8 pf chip capacitors atc100b6r8ct500xt atc c26, c29 2.2 pf chip capacitors atc100b2r2jt500xt atc c27, c30 4.3 pf chip capacitors atc100b4r3ct500xt atc r1, r4, r7, r10 0 ? , 3 a chip jumpers crcw12060000z0ea vishay r2, r3, r5, r6, r8, r9, r11, r12 1k ? , 1/4 w chip resistors crcw12061k00fkea vishay r13, r14 100 ? , 1/4 w chip resistors crcw1206100rfkea vishay r15, r17 0 ? , 2 a chip jumpers wcr1206--r005j welwyn r16 50 ? , 10 w chip resistor 81a7031--50--5f florida rf labs z1, z2 815--960 mhz band, 90 ? ,3dbchip hybrid couplers gsc362--hyb0900 soshin pcb 0.020 ? , ? r =3.55 rf35 taconic
6 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 typical characteristics 820 g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 2.5 watts avg. 33 38 37.5 37 -- 5 2 18 17.5 17 16.5 -- 4 7 -- 4 8 -- 4 9 -- 5 0 pae, power added efficiency (%) g ps , power gain (db) 36.5 36 35.5 35 34.5 34 33.5 840 860 880 900 920 940 960 980 16 -- 5 1 parc parc (db) 0.1 0.5 0.4 0.3 0.2 0 acpr (dbc) v dd =28vdc,p out =2.5w(avg.) i dq1(a+b) =58ma,i dq2(a+b) = 222 ma single--carrier w--cdma figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--l im3--u im5--u im5--l im7--l im7--u pae figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 4 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 1 7 10 16 10 70 60 50 40 30 20 pae, power added efficiency (%) --2db=9w -- 3 d b = 1 2 w 13 v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, f = 940 mhz acpr parc acpr (dbc) -- 5 5 -- 2 5 -- 3 0 -- 3 5 -- 4 5 -- 4 0 -- 5 0 37 g ps , power gain (db) 36.5 36 35.5 35 34.5 34 g ps pae 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf 200 v dd =28vdc,p out = 28 w (pep), i dq1(a+b) =58ma i dq2(a+b) = 222 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf --1db=6.5w
MD8IC925NR1 md8ic925gnr1 7 rf device data nxp semiconductors typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 1 0 -- 2 0 33 39 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 38 37 10 40 10 -- 6 0 acpr (dbc) 36 35 34 0 -- 3 0 -- 4 0 -- 5 0 figure 8. broadband frequency response 33 39 700 f, frequency (mhz) v dd =28vdc p in =0dbm i dq1(a+b) =58ma i dq2(a+b) = 222 ma 37 36 35 750 gain (db) 38 gain 800 850 900 950 1000 1050 1100 34 920 mhz 960 mhz 940 mhz v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf 960 mhz 940 mhz 920 mhz pae 940 mhz 920 mhz
8 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 9. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 10. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
MD8IC925NR1 md8ic925gnr1 9 rf device data nxp semiconductors v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out =2.5wavg. f mhz z in ? z load ? 820 47.9 + j2.34 7.51 + j5.45 840 47.9 + j2.47 7.62 + j5.42 860 47.8 + j2.61 7.60 + j5.41 880 47.8 + j2.75 7.48 + j5.44 900 47.7 + j2.89 7.27 + j5.55 920 47.7 + j3.04 7.00 + j5.74 940 47.7 + j3.19 6.71 + j6.01 960 47.6 + j3.34 6.40 + j6.37 980 47.6 + j3.49 6.10 + j6.79 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 11. series equivalent input and load impedance device under test output matching network z in z load
10 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 v dd =28vdc,i dq1a =21ma,i dq2a = 101 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 920 59.9 -- j18.3 56.8 + j19.1 10.9 + j2.37 32.4 43.0 20 57.8 -- 4 . 9 940 60.7 -- j18.5 61.2 + j14.3 12.4 + j1.56 32.2 42.9 20 54.9 -- 5 . 2 960 62.9 -- j10.5 64.5 + j8.82 14.8 + j0.656 31.9 42.9 20 55.1 -- 5 . 2 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 920 59.9 -- j18.3 56.9 + j16.9 10.7 + j1.54 30.1 43.8 24 57.2 -- 5 . 4 940 60.7 -- j18.5 60.8 + j12.3 11.7 + j1.11 30.0 43.7 24 55.6 -- 5 . 6 960 62.9 -- j10.5 63.5 + j7.10 13.7 + j0.12 29.7 43.7 24 55.5 --5.49 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. note: measurement made on a per side basis. figure 12. load pull performance ? maximum power tuning v dd =28vdc,i dq1a =21ma,i dq2a = 101 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max power added efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 920 59.9 -- j18.3 60.9 + j20.8 11.1 + j10.9 34.2 41.3 13 66.4 -- 6 . 7 940 60.7 -- j18.5 66.5 + j16.0 10.0 + j11.8 34.4 40.7 12 63.5 -- 7 . 8 960 62.9 -- j10.5 69.0 + j9.28 11.6 + j11.5 33.9 40.9 12 63.3 -- 6 . 8 f (mhz) z source ( ? ) z in ( ? ) max power added efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 920 59.9 -- j18.3 59.7 + j19.9 9.03 + j9.12 32.3 42.2 17 65.3 -- 9 . 9 940 60.7 -- j18.5 64.3 + j14.2 10.5 + j9.80 32.1 42.0 16 62.3 -- 7 . 6 960 62.9 -- j10.5 66.9 + j7.74 12.5 + j11.3 31.8 41.8 15 62.4 --3.44 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. note: measurement made on a per side basis. figure 13. load pull performance ? maximum power added efficiency tuning device under test output load pull tuner and test circuit z in z load
MD8IC925NR1 md8ic925gnr1 11 rf device data nxp semiconductors *c24, c25, c26, c27, c28, c29, c30 and c31 are mounted vertically. **r13 and r14 are stacked. z1 r13, r14** c1 v dd1a v dd1b r6 r9 v gg2a v gg1a v gg1b v gg2b r8 r7 c20 md8ic925n r5 r4 c2 c3 c4 c5 c7 figure 14. MD8IC925NR1 test circuit component layout ? 728--768 mhz c17 c16 c18 c19 c21 c22 c23 c24* c25* c26* c28* c29* c27* c30* c31* c32 c33 c34 r17 r16 z2 v dd2a v dd2b r15 cut out area c6 c15 c14 c11 c8 r1 r2 r3 r10 r11 r12 c9 c10 c12 c13 rev. 3 table 8. MD8IC925NR1 test circuit component designations and values ? 728--768 mhz part description part number manufacturer c1, c20, c21, c34 220 ? f, 100 v electrolytic capacitors eev--fk2a221m panasonic--ecg c2, c17, c22, c33 10 ? f chip capacitors c5750x7s2a106m230kb tdk c3, c6, c9, c12, c15, c18 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c7, c10, c13, c16, c19 47 pf chip capacitors atc600f470jt250xt atc c5, c8, c11, c14 1 ? f chip capacitors c3225x7r2a105kt tdk c23, c24, c31, c32 68 pf chip capacitors atc100b680jt500xt atc c25, c28 2.2 pf chip capacitors atc100b2r2jt500xt atc c26, c27, c29, c30 5.6 pf chip capacitors atc100b5r6ct500xt atc r1, r4, r7, r10 0 ?? 3 a chip jumpers crcw12060000z0ea vishay r2, r3, r5, r6, r8, r9, r11, r12 1k ?? 1/4 w chip resistors crcw12061k00fkea vishay r13, r14 100 ?? 1/4 w chip resistors crcw1206100rfkea vishay r15, r17 0 ? , 2 a chip jumpers wcr1206--r005j welwyn r16 50 ? , 10 w chip resistor 81a7031--50--5f florida rf labs z1, z2 815--960 mhz band, 90 ? ,3dbchip hybrid couplers gsc362--hyb0900 soshin pcb 0.020 ? , ? r =3.55 rf35 taconic
12 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 typical characteristics ? 728?768 mhz 710 g ps acpr f, frequency (mhz) figure 15. output peak--to--average ratio compression (parc) broadband performance @ p out = 2.5 watts avg. 36 37 36.9 36.8 -- 5 2 18.5 18 17.5 17 -- 4 7 -- 4 8 -- 4 9 -- 5 0 pae, power added efficiency (%) g ps , power gain (db) 36.7 36.6 36.5 36.4 36.3 36.2 36.1 720 730 740 750 760 770 780 790 16.5 -- 5 1 parc parc (db) -- 0 . 1 0.3 0.2 0.1 0 -- 0 . 2 acpr (dbc) single--carrier w--cdma 3.84 mhz channel bandwidth pae input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf 1 g ps acpr p out , output power (watts) avg. figure 16. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 1 0 -- 2 0 33 39 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 38 37 10 40 10 -- 6 0 acpr (dbc) 36 35 34 0 -- 3 0 -- 4 0 -- 5 0 figure 17. broadband frequency response 33 39 650 f, frequency (mhz) v dd =28vdc p in =0dbm i dq1(a+b) =58ma i dq2(a+b) = 222 ma 37 36 35 700 gain (db) 38 gain 750 800 850 900 950 1000 1050 34 v dd =28vdc,i dq1(a+b) =58ma i dq2(a+b) = 222 ma, single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf pae 748 mhz 728 mhz 768 mhz 728 mhz 768 mhz 748 mhz 728 mhz v dd =28vdc,p out =2.5w(avg.) i dq1(a+b) =58ma,i dq2(a+b) = 222 ma 748 mhz 768 mhz
MD8IC925NR1 md8ic925gnr1 13 rf device data nxp semiconductors v dd =28vdc,i dq1(a+b) =58ma,i dq2(a+b) = 222 ma, p out =2.5wavg. f mhz z in ? z load ? 710 48.2 + j1.65 8.02 + j6.72 720 48.2 + j1.71 8.43 + j6.89 730 48.2 + j1.77 8.64 + j7.04 740 48.1 + j1.83 8.84 + j7.17 750 48.0 + j1.89 9.01 + j7.29 760 48.1 + j1.95 9.16 + j7.39 770 48.0 + j2.01 9.28 + j7.49 780 48.0 + j2.08 9.38 + j7.59 790 48.0 + j2.14 9.45 + j7.68 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 18. series equivalent input and load impedance ? 728--768 mhz device under test output matching network z in z load
14 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 v dd =28vdc,i dq1a =21ma,i dq2a = 101 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 730 25.7 -- j5.86 24.7 + j3.12 8.35 + j5.97 34.0 42.7 19 58.9 -- 3 . 6 750 24.8 -- j8.46 24.8 + j6.48 8.50 + j5.61 33.9 42.8 19 57.8 -- 2 . 6 770 27.5 -- j12.2 26.5 + j10.4 10.0 + j4.28 33.7 43.1 20 60.0 -- 3 . 0 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 730 25.7 -- j5.86 25.7 + j3.64 8.59 + j4.89 31.6 43.5 23 60.0 -- 6 . 0 750 24.8 -- j8.46 26.0 + j6.61 8.40 + j4.59 31.5 43.6 23 58.2 -- 4 . 4 770 27.5 -- j12.2 27.6 + j10.4 9.89 + j3.68 31.5 43.8 24 61.9 --5.56 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. note: measurement made on a per side basis. figure 19. load pull performance ? maximum power tuning v dd =28vdc,i dq1a =21ma,i dq2a = 101 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max power added efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 730 25.7 -- j5.86 23.9 + j6.61 14.0 + j13.4 36.2 40.7 12 68.0 -- 6 . 4 750 24.8 -- j8.46 24.2 + j10.2 12.4 + j13.8 36.5 40.5 11 66.0 -- 6 . 1 770 27.5 -- j12.2 25.7 + j14.3 11.4 + j13.5 36.3 41.0 13 70.5 -- 8 . 2 f (mhz) z source ( ? ) z in ( ? ) max power added efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) pae (%) am/pm ( ? ) 730 25.7 -- j5.86 24.1 + j6.09 11.2 + j12.4 34.4 41.6 14 69.4 -- 1 1 750 24.8 -- j8.46 25.3 + j9.02 12.0 + j11.3 34.0 42.0 16 67.8 -- 6 . 3 770 27.5 -- j12.2 26.9 + j13.8 11.4 + j13.3 34.3 41.7 15 72.4 --10.60 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. note: measurement made on a per side basis. figure 20. load pull performance ? maximum power added efficiency tuning device under test output load pull tuner and test circuit z in z load
MD8IC925NR1 md8ic925gnr1 15 rf device data nxp semiconductors package dimensions
16 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1
MD8IC925NR1 md8ic925gnr1 17 rf device data nxp semiconductors
18 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1
MD8IC925NR1 md8ic925gnr1 19 rf device data nxp semiconductors
20 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1
MD8IC925NR1 md8ic925gnr1 21 rf device data nxp semiconductors product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 may 2013 ? initial release of data sheet 1 sept. 2016 ? table 5, stage 1 and stage 2, on characteristics v gs(q) typ values: updated to reflect correct statistical values,p.3 ? figure 12, 960 mhz, p3db load pull performance ? maximum power tuning: updated z in through am/pm values to reflect actual data, p. 10 ? figure 13, 960 mhz, p3db load pull performanc e ? maximum power added efficiency tuning: updated z in through am/pm values to reflect actual data, p. 10 ? figure 19, 770 mhz, p3db load pull performance ? maximum power tuning: updated z in through am/pm values to reflect actual data, p. 14 ? figure 20, 770 mhz, p3db load pull performanc e ? maximum power added efficiency tuning: updated z in through am/pm values to reflect actual data, p. 14
22 rf device data nxp semiconductors MD8IC925NR1 md8ic925gnr1 information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarant ee regardi ng the suit ability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, freescale, and the freescale logo are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2016 nxp b.v. how to reach us: home page: nxp.com web support: nxp.com/support document number: md8ic925n rev. 1, 9/2016

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